Effects of Size Reduction on the Electrical Transport Properties of 3D Bi Nanowire Networks

3D nanowire networks are fascinating systems for future microelectronic devices. They can be handled like macroscopic objects, while exhibiting properties of nanoscale materials. Here, the fabrication free-standing bismuth with well-controlled and systematically adjusted wire diameter interconnectivity is presented. The samples fabricated by pulse electroplating into pores ion track-etched membranes using an aqueous electrolyte. By optimizing growth parameters, homogeneously grown, mechanically self-supporting without a supporting matrix achieved. Cross-plane Seebeck coefficient electrical resistance values investigated as function temperature. unique characteristics these highly interconnected self-supported Bi offer exciting perspectives their implementation in, e.g., infrared detection based on thermoelectric effects, sensing, THz applications.